Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm

Stutius, W., Gavrilovic, P., Williams, J.E., Meehan, K. and Zarrabi, J.H. (1988) Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm. Electronics Letters, 24(24), pp. 1493-1494. (doi:10.1049/el:19881019)

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Abstract

Separate confinement single-quantum-well lasers with 100-120 A-thick strained Gal -.In,As/GaAs active layers have been grown on (100) GaAs substrates by metalorganic chemical vapour deposition. Ten-stripe proton-implanted arrays with 90pm-wide aperture and 250pm cavity length emit 200mW CW optical power at wavelengths 0.87 I i, 5 0.95pm. Lifetest data on an uncoated device emitting 90mW/facet at 50°C and I = 0.95pm suggest a mean-time-to-failure in excess of 2500 h at room temperature. The performance of lasers with strained Ga,-,In,As quantum wells is comparable to that of unstrained AI,Gal -,As/GaAs quantum-well lasers without facet coating.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Stutius, W., Gavrilovic, P., Williams, J.E., Meehan, K., and Zarrabi, J.H.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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