Highly strained Ge on Si microdisks with silicon nitride stressors

Millar, R.W. , Gallacher, K. , Frigerio, J., Chrastina, D., Isella, G. and Paul, D.J. (2015) Highly strained Ge on Si microdisks with silicon nitride stressors. In: 2015 IEEE 12th International Conference on Group IV Photonics (GFP), Vancouver, Canada, 26-28 Aug 2015, pp. 65-66. ISBN 9781479982547 (doi:10.1109/group4.2015.7305948)

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Abstract

Resonant emission is observed up to ~2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Gallacher, Dr Kevin and Paul, Professor Douglas and Millar, Dr Ross
Authors: Millar, R.W., Gallacher, K., Frigerio, J., Chrastina, D., Isella, G., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781479982547
Published Online:26 October 2015

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