Millar, R.W. , Gallacher, K. , Frigerio, J., Chrastina, D., Isella, G. and Paul, D.J. (2015) Highly strained Ge on Si microdisks with silicon nitride stressors. In: 2015 IEEE 12th International Conference on Group IV Photonics (GFP), Vancouver, Canada, 26-28 Aug 2015, pp. 65-66. ISBN 9781479982547 (doi: 10.1109/group4.2015.7305948)
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Abstract
Resonant emission is observed up to ~2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and Gallacher, Dr Kevin |
Authors: | Millar, R.W., Gallacher, K., Frigerio, J., Chrastina, D., Isella, G., and Paul, D.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISBN: | 9781479982547 |
Published Online: | 26 October 2015 |
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