Mid-Infrared Intersubband Absorption in p-Ge/SiGe Quantum Wells Grown on Si

Gallacher, K. et al. (2015) Mid-Infrared Intersubband Absorption in p-Ge/SiGe Quantum Wells Grown on Si. In: 2015 IEEE International Conference on Group IV Photonics (GFP), Vancouver, Canada, 26-28 Aug 2015, pp. 15-16. ISBN 9781479982547 (doi:10.1109/group4.2015.7305931)

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Abstract

Intersubband absorption from p-Ge quantum wells grown on Si is demonstrated. The absorption can be tuned by adjusting the quantum well thickness. FTIR transmission measurements on as-grown wafers show broad absorption at mid-infrared wavelengths.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Mr Ross and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Gallacher, K., Ballabio, A., Millar, R. W., Samarelli, A., Frigerio, J., Chrastina, D., Isella, G., Baldassarre, L., Ortolani, M., Sakat, E., Biagioni, P., and Paul, D. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781479982547
Copyright Holders:Copyright © 2015 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher
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