First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs

Fu, Y.-C., Peralagu, U. , Li, X. , Ignatova, O. , Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

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Abstract

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Item Type:Conference Proceedings
Keywords:III-V, ALD, plasma passivation, MOSCAP, plasma etching
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Steer, Dr Matthew and Li, Dr Xu and Thayne, Professor Iain and Ignatova, Ms Olesya and Peralagu, Mr Uthayasankaran
Authors: Fu, Y.-C., Peralagu, U., Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R., and Thayne, I.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre
Research Group:Ultrafast
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