Development of InSb dry etch for mid-IR applications

Pusino, V. , Xie, C., Khalid, A.-u.-H. , Thayne, I. G. and Cumming, D. R.S. (2016) Development of InSb dry etch for mid-IR applications. Microelectronic Engineering, 153, pp. 11-14. (doi: 10.1016/j.mee.2015.12.014)

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We present a new chlorine-free dry etching process which was used to successfully etch indium antimonide grown on gallium arsenide substrates while keeping the substrate temperature below 150 °C. By use of a reflowed photoresist mask a sidewall with 60 degree positive slope was achieved, whereas a nearly vertical one was obtained when hard masks were used. Long etch tests demonstrated the non-selectivity of the process by etching through the entire multi-layer epitaxial structure. Electrical and optical measurements on devices fabricated both by wet and dry etch techniques provided similar results, proving that the dry etch process does not cause damage to the material. This technique has a great potential to replace the standard wet etching techniques used for fabrication of indium antimonide devices with a non-damaging low temperature plasma process.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Cumming, Professor David and Pusino, Mr Vincenzo and Khalid, Dr Ata-Ul-Habib
Authors: Pusino, V., Xie, C., Khalid, A.-u.-H., Thayne, I. G., and Cumming, D. R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
ISSN (Online):1873-5568
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in Microelectronic Engineering 153_11-14
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
588331Triple wavelength superspectral camera focal-plane array (SUPERCAMERA)David CummingEngineering & Physical Sciences Research Council (EPSRC)EP/J018678/1ENG - ENGINEERING ELECTRONICS & NANO ENG