Stability, bistability and instability of amorphous ZrO2 resistive memory devices

Parreira, P. , Paterson, G. W. , McVitie, S. and MacLaren, D. A. (2016) Stability, bistability and instability of amorphous ZrO2 resistive memory devices. Journal of Physics D: Applied Physics, 49(9), 095111. (doi:10.1088/0022-3727/49/9/095111)

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Amorphous zirconium oxide thin films deposited at room temperature, sandwiched between Pt and Ti electrodes, show resistive bipolar resistive switching with good overall performance figures (retention, ON/OFF ratio and durability). A variability observed during electrical characterisation is consistent with the coexistence of two different resistive switching mechanisms within the ZrO2 layer. Electron energy loss spectroscopy is used to map chemical variations across the device on the nanoscale. Partial oxidation of the Ti electrode creates an ohmic contact with zirconia and injects positively charged oxygen vacancies into the zirconia layer that are then responsible for resistive switching at the Pt / zirconia interface.

Item Type:Articles
Glasgow Author(s) Enlighten ID:McVitie, Professor Stephen and Paterson, Dr Gary and Parreira, Dr Pedro Miguel and MacLaren, Dr Donald
Authors: Parreira, P., Paterson, G. W., McVitie, S., and MacLaren, D. A.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Physics D: Applied Physics
Publisher:IOP Publishing
ISSN (Online):1361-6463
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in Journal of Physics D: Applied Physics 49(9):095111
Publisher Policy:Reproduced under a Creative Commons License
Data DOI:10.5525/gla.researchdata.258

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
530721Integrating advanced nanomaterials into transformative technologiesDonald MaclarenEngineering & Physical Sciences Research Council (EPSRC)EP/I00419X/1P&A - PHYSICS & ASTRONOMY