Investigation into the Efficiency and Stability of Surface-Transfer Doped Hydrogen-Terminated Diamond Using MoO3

Crawford, K. G., Qi, D., Tallaire, A., Verona, C., Limiti, E. and Moran, D. A. J. (2015) Investigation into the Efficiency and Stability of Surface-Transfer Doped Hydrogen-Terminated Diamond Using MoO3. In: MRS Fall Meeting: Materials Research Society, Boston MA, USA, 29 Nov - 4 Dec 2015,

Abstract

The surface transfer doping process allows for diamond to be used as an active semiconductor for the production of diamond based electronic devices and components. The lack of stability of this doping mechanism due to its typical reliance on environmental operating conditions however has limited its practical application in diamond device technology. A particular focus for this technology is the development of high power, high frequency transistors [1] which are required to operate in "hostile" or "extreme" environments. Development of a temperature stable and operating-atmosphere independent doping mechanism for diamond is therefore of significant interest. Recent work has identified MoO3 as a potential surface acceptor material that when used to encapsulate the hydrogen-terminated diamond surface dramatically improves both the doping efficiency and stability [2]. Optimisation of the processes used to integrate this material into diamond electronics technology however must be developed to maximise potential benefits to performance. In this work we discuss the latest developments utilising MoO3 for the doping of H-diamond, including time and temperature dependent stability trials and the potential to integrate these new doping processes into diamond electronic devices such as field effect transistors.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Crawford, Mr Kevin and Moran, Professor David
• Authors: Crawford, K. G., Qi, D., Tallaire, A., Verona, C., Limiti, E., and Moran, D. A. J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering