Si-implanted and disordered stripe-geometry AlxGa1-xAs-GaAs quantum well lasers

Gavrilovic, P., Meehan, K., Guido, L. J., Holonyak, N., Eu, V., Feng, M. and Burnham, R. D. (1985) Si-implanted and disordered stripe-geometry AlxGa1-xAs-GaAs quantum well lasers. Applied Physics Letters, 47, 903. (doi:0.1063/1.95973)

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Abstract

The Si impurity is implanted into an Al x Ga1−x As‐GaAs quantum wellheterostructure to form, by impurity‐induced layer disordering and donor doping, a stripe‐geometry buried heterostructure laser.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Gavrilovic, P., Meehan, K., Guido, L. J., Holonyak, N., Eu, V., Feng, M., and Burnham, R. D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:A I P Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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