Donor-induced disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum-well lasers

Meehan, K., Gavrilovic, P., Epler, J. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Thornton, R. L. and Streifer, W. (1985) Donor-induced disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum-well lasers. Journal of Applied Physics, 57, 5345. (doi:10.1063/1.334853)

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Abstract

A simple form of a buried heterostructure Al x Ga1−x As‐GaAs quantum‐well laser is described that is realized by impurity‐induced layer disordering (d o n o r‐i n d u c e d disordering). The layer disordering [and the resulting band‐gap shift to higher energy (and lower index)] is accomplished by Si diffusion in a stripe pattern defined by a Si3N4 mask. Single‐mode lasers of stripe width 3 and 6 μm are demonstrated that operate continuously at 300 K in the threshold current range of 10–25 mA and with single‐facet power levels as high as 10–20 mW.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Gavrilovic, P., Epler, J. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Thornton, R. L., and Streifer, W.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550

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