Zn disordering of a Ga0.5In0.5P-(AlxGa1-x)0.5In0.5P quantum well heterostructure grown by metalorganic chemical vapor deposition

Meehan, K., Dabkowski, F. P., Gavrilovic, P., Williams, J. E., Stutius, W., Hsieh, K. C. and Holonyak, N. (1989) Zn disordering of a Ga0.5In0.5P-(AlxGa1-x)0.5In0.5P quantum well heterostructure grown by metalorganic chemical vapor deposition. Applied Physics Letters, 54(21), p. 2136. (doi:10.1063/1.101150)

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Abstract

It is well established by now that epitaxial layers of (Al x Ga1−x )0.5In0.5P and Ga0.5In0.5P grown on (001) GaAs substrates by metalorganic chemical vapor deposition at temperatures below 700 °C show an ordered arrangement of the group III atoms on the column III sublattice, resulting in a shift of the band gap to lower energies by ≊90 meV. In this letter we show that an (Al x Ga1−x )0.5In0.5P‐Ga0.5In0.5P quantum wellheterostructure containing the ordered phase can be converted to random alloy by a relatively short sealed‐tube zincdiffusion at a temperature of 600 °C, without affecting the dimensional or compositional stability of the quantum well. Complete intermixing of the quantum well with the cladding layers occurs at diffusion times longer than that required to disorder the column III ordered structure.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Dabkowski, F. P., Gavrilovic, P., Williams, J. E., Stutius, W., Hsieh, K. C., and Holonyak, N.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:A I P Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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