High power AlGaAs-GaAs visible diode lasers

Tihanyi, P.L., Jain, F.C., Robinson, M. J., Dixon, J., Williams, J.E., Meehan, K., O'Neill, M.S., Heath, L.S. and Beyea, D.M. (1994) High power AlGaAs-GaAs visible diode lasers. IEEE Photonics Technology Letters, 6(7), pp. 775-777. (doi:10.1109/68.311451)

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Abstract

A high-power room-temperature AlGaAs graded index separately confined heterostructure (GRINSCH) laser emitting in the visible spectral regime (congruent-to 715 nm) is reported for the first time. The device is gain-guided and consists of 12 stripes, each 5 mum in width with a centerline separation of 9 mum. This high-power visible laser has been successfully fabricated using a GaAlAs active layer. The epitaxial layer was grown with significantly lower levels of oxygen compared to those grown using standard metalorganic sources. Threshold currents of 310 mA at 10-degrees-C were routinely measured on uncoated devices. The uncoated device had a catastrophic optical damage limit of 540 mW and has a slope efficiency as high as 0.48. No degradation in device performance was observed during a 50-hour 150-mW burn-in.;A high-power room-temperature AlGaAs graded index separately confined heterostructure (GRINSCH) laser emitting in the visible spectral regime (/spl sime/715 nm) is reported for the first time. The device is gain-guided and consists of 12 stripes, each 5 /spl mu/m in width with a centerline separation of 9 /spl mu/m. This high-power visible laser has been successfully fabricated using a GaAlAs active layer. The epitaxial layer was grown with significantly lower levels of oxygen compared to those grown using standard metalorganic sources. Threshold currents of 310 mA at 10/spl deg/C were routinely measured on uncoated devices. The uncoated device had a catastrophic optical damage limit of 540 mW and has a slope efficiency as high as 0.48. No degradation in device performance was observed during a 50-hour 150-mW burn-in.

Item Type:Articles
Keywords:Semiconductor lasers; optical waveguides; GaAlAs active layer; slope efficiency; gain-guided; semiconductor epitaxial layers; high power AlGaAs-GaAs visible diode lasers; burn-in; Diode lasers; graded index separately confined heterostructure laser; standard metalorganic sources; III-V semiconductors; centerline separation; Optical materials; threshold currents; Zinc; Current measurement; epitaxial layer; aluminium compounds; Artificial intelligence; gallium arsenide; Epitaxial layers; device performance; Oxygen; Threshold current; AlGaAs-GaAs; catastrophic optical damage limit; visible spectral regime; gradient index optics; Gettering; uncoated devices
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Tihanyi, P.L., Jain, F.C., Robinson, M. J., Dixon, J., Williams, J.E., Meehan, K., O'Neill, M.S., Heath, L.S., and Beyea, D.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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