Realisation of Optically Transparent Gate Field Effect Transistors (TEGFETs)

Khalid, A. H. and Rezazadeh, A. A. (1996) Realisation of Optically Transparent Gate Field Effect Transistors (TEGFETs). In: IEE Colloquium on Optical Control of Microwave Circuits, London, UK, 1 Feb 1996, (doi:10.1049/ic:19960093)

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Abstract

FETs have been used as optical detector or as an optically controlled device but optical coupling have always been an important issue and needed to be resolved. This problem can be resolved by replacing the gate material with transparent indium tin oxide (ITO). The electrical and optical characteristics of novel Transparent Gate Field Effect Transistors (TGFETs) on GaAs substrate (both MESFETs and PHEMTs) are studied for optoelectronic applications at microwave frequencies. The TGFETs is fabricated on ion implanted GaAs MESFET with ITO gate electrodes, while TGHEMT is fabricated using AlGaAs-InGaAs-GaAs PHEMT layer structure. The processing details of MESFET and HEMT devices with ITO gates has been described and it was demonstrated that high quality ITO films with transparency greater than 90% and low sheet resistance can be achieved. The DC optical responsivity of these devices is greater than 4.5 A/W for a radiation wavelength of 632.8 nm. We present further analysis of the electrical and optical performance of these novel devices and their applications for direct control of microwave devices.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Khalid, A. H., and Rezazadeh, A. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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