Optically Transparent Gate High Electron Mobility Transistors TGHEMTs) using Indium -Tin -Oxide (ITO)

Khalid, A. H. and Rezazadeh, A. A. (1995) Optically Transparent Gate High Electron Mobility Transistors TGHEMTs) using Indium -Tin -Oxide (ITO). In: 10th International conference on Semiconductor and Integrated OptoElectron ics (SIOE), Cardiff, UK, March 1995,

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Khalid, A. H., and Rezazadeh, A. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record