Fabrication and characterisation of Transparent Gate High Electron Mobility Transistors (TGHEMT) using Indium Tin Oxide (ITO)

Khalid, A. H. , Basher, S. A. and Rezazadeh, A. A. (1994) Fabrication and characterisation of Transparent Gate High Electron Mobility Transistors (TGHEMT) using Indium Tin Oxide (ITO). In: EDMO 1994: 2nd International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, King's College, London, UK, Nov 1994,

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Khalid, A. H., Basher, S. A., and Rezazadeh, A. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record