Intrinsic Delay Times in Single and Double HBTs Directly Extracted from Measured S-Parameter Data

Sotoodeh, M., Khalid, A. H. and Rezazadeh, A. A. (1998) Intrinsic Delay Times in Single and Double HBTs Directly Extracted from Measured S-Parameter Data. In: 28th European Solid-State Device Research Conference, Bordeaux, France, 8-10 Sept 1998, pp. 400-403. ISBN 2863322346

Sotoodeh, M., Khalid, A. H. and Rezazadeh, A. A. (1998) Intrinsic Delay Times in Single and Double HBTs Directly Extracted from Measured S-Parameter Data. In: 28th European Solid-State Device Research Conference, Bordeaux, France, 8-10 Sept 1998, pp. 400-403. ISBN 2863322346

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Abstract

A new method is presented to evaluate the base and collector transit times, tB and 'te, in Heterojunction Bipolar Transistors (HBTs) from the phase and magnitude of the common-base current gain, a( co), directly extracted from measured Sparameter data. The method is applied to InGaP/GaAs single and double HBTs. A smaller cut-off frequency in the latter device is attributed to 'tB and te due to the trapping of electrons in the conduction band triangular barrier existing ill the basecollector (B-C) heterojunction and smaller saturation velocity of electrons in InGaP as compared to GaAs, respectively. Finally, a new B-C design of InGaP/GaAs DHBTs is proposed to partially compensate the transit time effects.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Khalid, Dr Ata-ul-Habib
Authors: Sotoodeh, M., Khalid, A. H., and Rezazadeh, A. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:2863322346

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