Childs, D. , Malik, S., Siverns, P., Roberts, C. and Murray, R. (1999) 1.3 μm InAs/GaAs quantum dot led. MRS Proceedings, 571, (doi: 10.1557/PROC-571-267)
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Abstract
We have determined the growth conditions which result in a narrow linewidth and room temperature emission at 1.3pm from InAs/GaAs Quantum dots (QDs). The QDs formed under these conditions are extremely uniform in size and exhibit an emission linewidth of only 25meV. Single QD layers have been incorporated into p-i-n diodes which exhibit strong electroluminescence. We have compared the efficiency of these devices with a nominally identical quantum well device. The QD based device exhibits a higher electroluminescence efficiency, especially at low current densities. At higher current densities there is a loss of efficiency due to recombination from excited states.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Childs, Dr David |
Authors: | Childs, D., Malik, S., Siverns, P., Roberts, C., and Murray, R. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | MRS Proceedings |
Publisher: | Cambridge University Press |
ISSN: | 1946-4274 |
ISSN (Online): | 1946-4274 |
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