1.3 μm InAs/GaAs quantum dot led

Childs, D., Malik, S., Siverns, P., Roberts, C. and Murray, R. (1999) 1.3 μm InAs/GaAs quantum dot led. MRS Proceedings, 571, (doi:10.1557/PROC-571-267)

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Abstract

We have determined the growth conditions which result in a narrow linewidth and room temperature emission at 1.3pm from InAs/GaAs Quantum dots (QDs). The QDs formed under these conditions are extremely uniform in size and exhibit an emission linewidth of only 25meV. Single QD layers have been incorporated into p-i-n diodes which exhibit strong electroluminescence. We have compared the efficiency of these devices with a nominally identical quantum well device. The QD based device exhibits a higher electroluminescence efficiency, especially at low current densities. At higher current densities there is a loss of efficiency due to recombination from excited states.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David
Authors: Childs, D., Malik, S., Siverns, P., Roberts, C., and Murray, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:MRS Proceedings
Publisher:Cambridge University Press
ISSN:1946-4274
ISSN (Online):1946-4274

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