Growth and Characterization of 1.3μm Multi-Layer Quantum Dots Lasers Incorporating High Growth Temperature Spacer Layers

Sellers, I. R. et al. (2005) Growth and Characterization of 1.3μm Multi-Layer Quantum Dots Lasers Incorporating High Growth Temperature Spacer Layers. 27th International Conference on the Physics of Semiconductors - ICPS-27, Flagstaff, AZ, USA, 26-30 Jul 2004. pp. 1547-1548. ISBN 0735402574 (doi:10.1063/1.1994706)

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Abstract

The use of high growth temperature GaAs spacer layers is shown to significantly improve the performance of 1.3μm multi‐layer quantum dot lasers by preventing the formation of threading dislocations. As‐cleaved devices exhibit a cw room temperature (300K) threshold current density (Jth ) of 39 Acm−2 and operate up to 105°C. High reflectivity coated facet devices operate at 300K with a cw Jth of 17 Acm−2.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David
Authors: Sellers, I. R., Liu, H.Y., Mowbray, D.J., Badcock, T.J., Groom, K.M., Hopkinson, M., Gutiérrez, M., Skolnic, M.S., Beanland, R., Childs, D.T., and Robbins, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:0094243X
ISBN:0735402574

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