1.3 µm InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Sellers, I.R., Liu, H.Y., Groom, K.M., Childs, D.T., Robbins, D., Badcock, T.J., Hopkinson, M., Mowbray, D.J. and Skolnick, M.S. (2004) 1.3 µm InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density. Electronics Letters, 40(22), p. 1412. (doi:10.1049/el:20046692)

Full text not currently available from Enlighten.

Abstract

A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David
Authors: Sellers, I.R., Liu, H.Y., Groom, K.M., Childs, D.T., Robbins, D., Badcock, T.J., Hopkinson, M., Mowbray, D.J., and Skolnick, M.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

University Staff: Request a correction | Enlighten Editors: Update this record