Scanning transmission-electron microscopy study of InAs/GaAs quantum dots

Siverns, P.D., Malik, S., McPherson, G., Childs, D., Roberts, C., Murray, R., Joyce, B. A. and Davock, H. (1998) Scanning transmission-electron microscopy study of InAs/GaAs quantum dots. Physical Review B, 58(16), R10127-R10130. (doi:10.1103/PhysRevB.58.R10127)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1103/PhysRevB.58.R10127

Abstract

We present results obtained from a scanning transmission-electron microscopy study of InAs/GaAs quantum dot (QD) layers. It is shown that the QD’s are embedded within an InxGa1−xAs confining layer following overgrowth with GaAs. Using energy dispersive x-ray analysis (EDX) the QD dimensions can be measured with reasonable accuracy and are not affected by strain contrast. In QD bilayers where the dots are uncorrelated along the growth direction, a comparison of the indium EDX signals from the confining layer and a dot allow us to estimate the compositions of these regions as In0.07Ga0.93As and In0.31Ga0.69As, respectively.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David
Authors: Siverns, P.D., Malik, S., McPherson, G., Childs, D., Roberts, C., Murray, R., Joyce, B. A., and Davock, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physical Review B
Publisher:American Physical Society
ISSN:0163-1829
ISSN (Online):1550-235X

University Staff: Request a correction | Enlighten Editors: Update this record