A photomodulated reflectance study of InAs/GaAs self-assembled quantum dots

Rowland, G.L., Hosea, T.J.C., Malik, S., Childs, D. and Murray, R. (1998) A photomodulated reflectance study of InAs/GaAs self-assembled quantum dots. Applied Physics Letters, 73(22), 3268. (doi:10.1063/1.122740)

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Abstract

Photomodulated reflectance (PR) spectra have been measured for self-assembled InAs/GaAs quantum dot(QD) structures consisting of a pair of QD layers, with a GaAs spacer either 50 or 100 Å thick. The PR clearly reveals five confined-state QD transitions, at both 80 and 300 K, as well as features from the two-dimensional confining and GaAs layers. The measuredQD transition energies correlate well with photoluminescencespectra at 13 K, using high laser excitation powers to incur level filling. Annealing one of the samples produces a strong blueshift in the QD transitions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David
Authors: Rowland, G.L., Hosea, T.J.C., Malik, S., Childs, D., and Murray, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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