1.3 µm room temperature emission from InAs/GaAs self-assembled quantum dots

Murray, R., Childs, D., Malik, S., Siverns, P., Roberts, C., Hartmann, J.-M. and Stavrinou, P. (1999) 1.3 µm room temperature emission from InAs/GaAs self-assembled quantum dots. Japanese Journal of Applied Physics, 38(1B), pp. 528-530. (doi:10.1143/JJAP.38.528)

Full text not currently available from Enlighten.

Abstract

We have investigated the growth conditions necessary to achieve strong room temperature emission at 1.3 µm for InAs/GaAs self-assembled quantum dots (QDs) using conventional solid source molecular beam epitaxy (MBE). A relatively high substrate temperature and very low growth rate (LGR) result in long wavelength emission with a small linewidth of only 24 meV. Atomic Force Micrographs obtained from uncapped samples reveal several differences between the LGRQDs and those grown at higher growth rates. The former are larger, more uniform in size and their density is lower by a factor of about 4. LGRQDs have been incorporated in p-i-n structures and strong room temperature electroluminescence detected. The light output of the QD p-i-n diodes is found to be significantly higher than a quantum well (QW) sample at least for current densities up to 0.5 kAcm-2.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David
Authors: Murray, R., Childs, D., Malik, S., Siverns, P., Roberts, C., Hartmann, J.-M., and Stavrinou, P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Japanese Journal of Applied Physics
ISSN:0021-4922
ISSN (Online):1347-4065

University Staff: Request a correction | Enlighten Editors: Update this record