High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

Liu, H.Y., Childs, D.T., Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J. and Skolnick, M.S. (2005) High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE Photonics Technology Letters, 17(6), pp. 1139-1141. (doi:10.1109/LPT.2005.846948)

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Abstract

The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm2 for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David
Authors: Liu, H.Y., Childs, D.T., Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J., and Skolnick, M.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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