Enhancement of Power and Frequency in HEMT-Like Planar Gunn Diodes by Introducing Extra Delta-Doping Layers

Li, C. , Khalid, A. , Paluchowski Caldwell, S. H., Pilgrim, N. J., Holland, M. C., Dunn, G. M. and Cumming, D. R. S. (2010) Enhancement of Power and Frequency in HEMT-Like Planar Gunn Diodes by Introducing Extra Delta-Doping Layers. In: ISCS 2010: 37th International Symposium on Compound Semiconductors, Kagawa, Japan, 31 May - 4 June 2010,

Li, C. , Khalid, A. , Paluchowski Caldwell, S. H., Pilgrim, N. J., Holland, M. C., Dunn, G. M. and Cumming, D. R. S. (2010) Enhancement of Power and Frequency in HEMT-Like Planar Gunn Diodes by Introducing Extra Delta-Doping Layers. In: ISCS 2010: 37th International Symposium on Compound Semiconductors, Kagawa, Japan, 31 May - 4 June 2010,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Khalid, Dr Ata-ul-Habib
Authors: Li, C., Khalid, A., Paluchowski Caldwell, S. H., Pilgrim, N. J., Holland, M. C., Dunn, G. M., and Cumming, D. R. S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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