Pulsed I-V and Small Signal Characterisation and Modelling of Resonant Tunneling Diodes

Ofiare, A., Khalid, A. , Wang, J. and Wasige, E. (2015) Pulsed I-V and Small Signal Characterisation and Modelling of Resonant Tunneling Diodes. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 286-289. (doi:10.1109/PRIME.2015.7251391)

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Abstract

This paper describes the use of dc pulses for current voltage (I-V) characterisation of resonant tunnelling diodes (RTDs). The results show that accurate (parasitic) oscillation-free measurements of the negative differential resistance (NDR) region can be done. The proposed technique allows for the monitoring of possible onset of parasitic oscillations during measurements, and so allows for specific measurement windows (when the device is stable) to be identified and so enable accurate measurements. Pulsed I-V experimental results of resonant tunnelling diodes are presented along with modelled I-V curves. In addition, the extraction of a small-signal equivalent circuit model for the RTD from the measured S-parameters (S11) is described.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wang, Dr Jue and Khalid, Dr Ata-ul-Habib
Authors: Ofiare, A., Khalid, A., Wang, J., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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