Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis

García Marín, A., Garcia Nunez, C. , Ruiz, E., Piqueras, J. and Pau, J.L. (2013) Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis. Applied Physics Letters, 102(23), 232105. (doi: 10.1063/1.4811128)

Full text not currently available from Enlighten.

Abstract

Metal oxide nanowire (NW) photoconductors tend to exhibit high photoconductive gains and long recovery times mainly due to surface effects. In this work, p-type CuO NWs are synthesized by direct oxidation of copper and deposited on n-type ZnO:Al electrodes by dielectrophoresis. The heterostructure is electro-optically characterized showing recovery times in the 10 μs range, mainly limited by the resistance-capacitance product of the equivalent circuit, without signs of persistent effects. The fast response is attributed to short transit times across space charge regions built between CuO and ZnO:Al materials and fast carrier recombination at neutral regions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Garcia Nunez, Dr Carlos
Authors: García Marín, A., Garcia Nunez, C., Ruiz, E., Piqueras, J., and Pau, J.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing LLC
ISSN:0003-6951
ISSN (Online):1077-3118

University Staff: Request a correction | Enlighten Editors: Update this record