Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices

Garcia Nunez, C. , Pau, J. L., Ruíz, E. and Piqueras, J. (2012) Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices. Applied Physics Letters, 101(25), 253501. (doi: 10.1063/1.4767131)

Abstract

Zinc nitride films were used as an active layer in thin film transistors to assess its performance in optoelectronic applications. Those nitride layers were grown by radio-frequency magnetron sputtering in Ar/N2 ambient using a Zn target. Bottom- and top-gate thin film transistors were fabricated by photolithography processes. Transmission measurements for these particular layers showed an absorption edge around 1.3 eV. Normally off transistor characteristics with a threshold voltage of 6 V were obtained in the bottom-gate configuration without post-growth annealing. In the saturation region, those transistors produced enhanced output characteristics under illumination with infrared/visible light.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Garcia Nunez, Dr Carlos
• Authors: Garcia Nunez, C., Pau, J. L., Ruíz, E., and Piqueras, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics Letters
• Publisher: American Institute of Physics
• ISSN: 0003-6951
• ISSN (Online): 1077-3118