Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs

Donetti, L., Sampedro, C., Gamiz, F., Godoy, A., Garcıa-Ruız, F. J., Towie, E., Georgiev, V. , Amoroso, S. M., Riddet, C. and Asenov, A. (2015) Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 353-356. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292332)

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Abstract

The need for an accurate simulation of non-planar devices such as FinFETs and nanowire based FETs, including a full quantun treatment of transversal two-dimensional confinement, motivated the development of a three-dimensional MultiSubband Ensemble Monte Carlo (MS-EMC) simulator. Here we describe the last improvements of such simulator including better convergence properties and statistical improvements for the computation of the drain current. The simulator is employed to study MOS devices based on Si nanowires with lateral sizes of a few nanometers. The results show the importance of a proper two-dimensional treatment of quantum confinement, which can be achieved with our simulator.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Towie, Dr Ewan and Amoroso, Dr Salvatore and Georgiev, Dr Vihar and Asenov, Professor Asen and Riddet, Mr Craig
Authors: Donetti, L., Sampedro, C., Gamiz, F., Godoy, A., Garcıa-Ruız, F. J., Towie, E., Georgiev, V., Amoroso, S. M., Riddet, C., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1946-1569
ISBN:9781467378581
Copyright Holders:Copyright © 2015 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.
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