Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

Fu, Y.-C., Peralagu, U. , Ignatova, O. , Li, X. , Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi: 10.1109/PRIME.2015.7251406)

Abstract

Based on sulphur passivation (10% (NH₄)₂S, 20min), the interface of MOS capacitors between atomic-layer-deposited Al₂O₃ and (110)-oriented p-type In_0.53Ga_0.47As layers indicate the capability of Fermi level movement and minority carrier inversion. C_ox has effectively extracted by Gm/<i>w</i> and -<i>w</i>dC/d<i>w</i>. Forming gas annealing (N₂:H₂ 5%:95% at 350^oC, 30min) improves minority carrier response and the interface trap density around the midgap estimated to be 4.4x10¹² (1.6x10¹²) cm^-2eV^-1 before (and after) FGA. Moreover, Fowler-Nordheim (FN) tunneling current provides the conduction band offset at the surface between Al₂O₃ and In_0.53Ga_0.47As (110)-oriented layer is ~1.81eV and the barrier height is estimated to be the same after FGA. Finally, the band parameter of Al₂O₃ and In_0.53Ga_0.47As (110)-oriented layer has been firstly reported.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Peralagu, Mr Uthayasankaran and Li, Dr Xu and Ignatova, Dr Olesya
• Authors: Fu, Y.-C., Peralagu, U., Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P., and Thayne, I.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Micro- and Nanotechnology (Ultrafast Systems)