Simulation study of the impact of quantum confinement on the electrostatically driven oerformance of n-type nanowire transistors

Wang, Y. et al. (2015) Simulation study of the impact of quantum confinement on the electrostatically driven oerformance of n-type nanowire transistors. IEEE Transactions on Electron Devices, 62(10), pp. 3229-3236. (doi: 10.1109/TED.2015.2470235)

110788.pdf - Accepted Version



In this paper, we have studied the impact of quantum confinement on the performance of n-type silicon nanowire transistors (NWTs) for application in advanced CMOS technologies. The 3-D drift-diffusion simulations based on the density gradient approach that has been calibrated with respect to the solution of the Schrödinger equation in 2-D cross sections along the direction of the transport are presented. The simulated NWTs have cross sections and dimensional characteristics representative of the transistors expected at a 7-nm CMOS technology. Different gate lengths, cross-sectional shapes, spacer thicknesses, and doping steepness were considered. We have studied the impact of the quantum corrections on the gate capacitance, mobile charge in the channel, drain-induced barrier lowering, and subthreshold slope. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic speed of the NWTs, is also investigated. We have also estimated the optimal gate length for different NWT design conditions.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Towie, Dr Ewan and Amoroso, Dr Salvatore and Georgiev, Dr Vihar and Cheng, Dr Binjie and Wang, Dr Xingsheng and Asenov, Professor Asen and Al-Ameri, Talib Mahmood Ali and Riddet, Mr Craig
Authors: Wang, Y., Al-Ameri, T., Wang, X., Georgiev, V. P., Towie, E., Amoroso, S. M., Brown, A. R., Cheng, B., Reid, D., Riddet, C., Shifren, L., Sinha, S., Yeric, G., Aitken, R., Liu, X., Kang, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
ISSN (Online):1557-9646
Copyright Holders:Copyright © 2015 IEEE
First Published:First published in IEEE Transactions on Electron Devices 62(10):3229-3236
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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