Circuits for high performance complementary metal-oxide-semiconductor (CMOS) image sensors

Choubey, B., Mughal, W. and Gouveia, L. (2014) Circuits for high performance complementary metal-oxide-semiconductor (CMOS) image sensors. In: Durini, D. (ed.) High Performance Silicon Imaging: Fundamentals and Applications CMOS and CCD Sensors. Series: Woodhead Publishing series in electronic and optical materials (60). Woodhead Publishing: Cambridge, pp. 124-164. ISBN 9780857097521 (doi: 10.1533/9780857097521.1.124)

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Abstract

Complementary metal-oxide-semiconductor (CMOS) image sensors have become the mainstay of imaging technology with applications ranging from low end requirements such as that of toys to high end scientific applications. This has been achieved by several advances including noise reduction, pixel count, capture speed enhancement, global shuttering, power reduction as well as dynamic range improvement. This chapter reviews circuits utilised to provide these improvements in CMOS image sensors.

Item Type:Book Sections (Other)
Keywords:Pixel size , fixed pattern noise , correlated double sampling , ADC , pixel speed , wide dynamic range , threshold comparison pixels , logarithmic pixels , global shutter , dark current.
Status:Published
Glasgow Author(s) Enlighten ID:Gouveia, Mr Luiz and Choubey, Dr Bhaskar
Authors: Choubey, B., Mughal, W., and Gouveia, L.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Electronic Design Center
Publisher:Woodhead Publishing
ISBN:9780857097521
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