Field-effect mobility of InAs surface channel nMOSFET with low Dit scaled gate-stack

Wang, S.-W. et al. (2015) Field-effect mobility of InAs surface channel nMOSFET with low Dit scaled gate-stack. IEEE Transactions on Electron Devices, 62(8), pp. 2429-2436. (doi:10.1109/TED.2015.2445854)

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Abstract

Frequency (100 Hz ≤ f ≤ 1 MHz) and temperature (−50 ≤ T ≤ 20 °C) characteristics of low interface state density Dit high-κ gate-stacks on n-InAs have been investigated. Capacitance–voltage (C–V) curves exhibit typical accumulation/depletion/inversion behavior with midgap Dit of 2 × 1011 and 4 × 1011 cm−2 eV−1 at −50 °C and 20 °C, respectively. Asymmetry of low-frequency C–V curves and C–T dependence for negative voltage showing a sharp transition of ∼=−20 dB/decade between low- and high-frequency behavior indicate surface inversion. An inversion carrier activation energy and an InAs hole lifetime of 0.32 eV and 2 ns have been extracted, respectively. Surface channel nMOSFETs with gate length Lg = 1 μm, channel thickness = 10 nm, and equivalent oxide thickness (EOT) 1 ≤ EOT ≤ 1.6 nm have been fabricated. For EOT = 1 nm, a subthreshold swing S = 65 mV/decade, transconductance gm = 1.6 mS/μm, and ON-current ION = 426 μA/μm at an OFF-current IOFF = 100 nA/μm (supply voltage Vdd = 0.5 V) have been measured. Peak electron field-effect mobilities of 6000–7000 cm2/Vs at sheet electron densities of 2–3 × 1012 cm−2 were obtained for EOT as small as 1 nm.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Thayne, Professor Iain and Macintyre, Dr Douglas and Oxland, Dr Richard and Thoms, Dr Stephen
Authors: Wang, S.-W., Vasen, T., Doornbos, G., Oxland, R., Chang, S.-W., Li, X., Contreras-Guerrero, R., Holland, M., Wang, C.-H., Edirisooriya, M., Rojas-Ramirez, J. S., Ramvall, P., Thoms, S., Macintyre, D. S., Vellianitis, G., Hsieh, G. C. H., Chang, Y.-S., Yin, K. M., Yeo, Y.-C., Diaz, C. H., Droopad, R., Thayne, I. G., and Passlack, M.
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646

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