FinFET centric variability-aware compact model extraction and generation technology supporting DTCO

Wang, X., Cheng, B., Reid, D., Pender, A., Asenov, P., Millar, C. and Asenov, A. (2015) FinFET centric variability-aware compact model extraction and generation technology supporting DTCO. IEEE Transactions on Electron Devices, 62(10), pp. 3139-3146. (doi: 10.1109/TED.2015.2463073)

Abstract

In this paper, we present a FinFET-focused variability-aware compact model (CM) extraction and generation technology supporting design-technology co-optimization. The 14-nm CMOS technology generation silicon on insulator FinFETs are used as testbed transistors to illustrate our approach. The TCAD simulations include a long-range process-induced variability using a design of experiment approach and short-range purely statistical variability (mismatch). The CM extraction supports a hierarchical CM approach, including nominal CM extraction, response surface CM extraction, and statistical CM extraction. The accurate CM generation technology captures the often non-Gaussian distributions of the key transistor figures of merit and their correlations preserving also the correlations between process and statistical variability. The use of the hierarchical CM is illustrated in the simulation of FinFET-based SRAM cells and ring oscillators.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wang, Dr Xingsheng and Asenov, Professor Asen and Cheng, Dr Binjie
• Authors: Wang, X., Cheng, B., Reid, D., Pender, A., Asenov, P., Millar, C., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• ISSN (Online): 1557-9646
• Copyright Holders: Copyright © 2015 IEEE
• First Published: First published in IEEE Transactions on Electron Devices 62(10):3139-3146
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.