Optimal Geometry of CMOS Voltage-Mode and Current-Mode Vertical Magnetic Hall Sensors

Heidari, H. , Bonizzoni, E., Gatti, U., Maloberti, F. and Dahiya, R. (2015) Optimal Geometry of CMOS Voltage-Mode and Current-Mode Vertical Magnetic Hall Sensors. In: IEEE Sensors 2015, Busan, South Korea, 01-04 Nov 2015, pp. 1-4. ISBN 9781479982035 (doi:10.1109/ICSENS.2015.7370365)

108141.pdf - Accepted Version



Four different geometries of a vertical Hall sensor are presented and studied in this paper. The current spinning technique compensates for the offset and the sensors, driven in current-mode, provide a differential signal current for a possible capacitive integration over a defined time-slot. The sensors have been fabricated using a 6-metal 0.18-μm CMOS technology and fully experimentally tested. The optimal solution will be further investigated for bendable electronics. Measurement results of the four structures over the 10 available samples show for the best geometry an offset of 41.66 ± 8 μT and a current-mode sensitivity of 9 ± 0.1 %/T. Since the figures widely change with geometry, a proper choice secures optimal performance.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Heidari, Dr Hadi and Dahiya, Professor Ravinder
Authors: Heidari, H., Bonizzoni, E., Gatti, U., Maloberti, F., and Dahiya, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2015 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.
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