High performance GaN high electron mobility transistors on low resistivity silicon for X-Band applications

Eblabla, A., Li, X. , Thayne, I. , Wallis, D. J., Guiney, I. and Elgaid, K. (2015) High performance GaN high electron mobility transistors on low resistivity silicon for X-Band applications. IEEE Electron Device Letters, 36(9), pp. 899-901. (doi:10.1109/LED.2015.2460120)

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Abstract

This letter reports the RF performance of a 0.3 m gate length AlGaN/AlN/GaN HEMT realized on a 150 mm diameter low-resistivity (LR) ( < 10 cm) silicon substrate. Short circuit current gain (fT) and maximum frequency of oscillation (fMAX) of 55 GHz and 121 GHz respectively were obtained. To our knowledge, these are the highest fT/fMAX values reported to date for GaN HEMTs on LR silicon substrates.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Thayne, Professor Iain and Eblabla, Mr Abdalla and Elgaid, Dr Khaled
Authors: Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I., and Elgaid, K.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):1558-0563
Copyright Holders:Copyright © 2015 IEEE
First Published:First published in IEEE Electron Device Letters 36(9):899-901
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher
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