Eblabla, A., Li, X. , Thayne, I. , Wallis, D. J., Guiney, I. and Elgaid, K. (2015) High performance GaN high electron mobility transistors on low resistivity silicon for X-Band applications. IEEE Electron Device Letters, 36(9), pp. 899-901. (doi: 10.1109/LED.2015.2460120)
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Abstract
This letter reports the RF performance of a 0.3 m gate length AlGaN/AlN/GaN HEMT realized on a 150 mm diameter low-resistivity (LR) ( < 10 cm) silicon substrate. Short circuit current gain (fT) and maximum frequency of oscillation (fMAX) of 55 GHz and 121 GHz respectively were obtained. To our knowledge, these are the highest fT/fMAX values reported to date for GaN HEMTs on LR silicon substrates.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Li, Dr Xu and Thayne, Prof Iain and Eblabla, Mr Abdalla and Elgaid, Dr Khaled |
Authors: | Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I., and Elgaid, K. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Electron Device Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
Copyright Holders: | Copyright © 2015 IEEE |
First Published: | First published in IEEE Electron Device Letters 36(9):899-901 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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