Expanding the Ge emission wavelength to 2.25 μm with SixNy strain engineering

Millar, R.W., Gallacher, K., Samarelli, A., Frigerio, J., Chrastina, D., Dieing, T., Isella, G. and Paul, D.J. (2016) Expanding the Ge emission wavelength to 2.25 μm with SixNy strain engineering. Thin Solid Films, 602, pp. 60-63. (doi:10.1016/j.tsf.2015.07.017)

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Abstract

Photoluminescence up to 2.25 μm wavelength is demonstrated from Ge nanopillars strained by silicon nitride stressor layers. Tensile biaxial equivalent strains of up to ~1.35% and ~0.9% are shown from 200 × 200 nm, and 300 × 300 nm square top Ge pillars respectively. Strain in the latter is confirmed by Raman spectroscopy, and supported by finite element modelling, which gives an insight into the strain distribution and its effect on the band structure, in pillar structures fully coated by silicon nitride stressor layers.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Mr Ross and Samarelli, Mr Antonio and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Millar, R.W., Gallacher, K., Samarelli, A., Frigerio, J., Chrastina, D., Dieing, T., Isella, G., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Thin Solid Films
Publisher:Elsevier B.V.
ISSN:0040-6090
ISSN (Online):1879-2731
Copyright Holders:Copyright © 2015 Elsevier B.V.
First Published:First published in Thin Solid Films 602: 60-63
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1ENG - ENGINEERING ELECTRONICS & NANO ENG