Cheng, B., Wang, X., Brown, A.R., Millar, C. and Asenov, A. (2012) Statistical TCAD based PDK development for a FinFET technology at 14nm technology node. In: SISPAD 2012, Denver, CO, USA, 5-7 Sep 2012, pp. 113-116. ISBN 9780615717562
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Publisher's URL: http://www.ece.umd.edu/sispad2012/
Abstract
A TCAD-based process design kit (PDK) development strategy is present for a generic SOI-based FinFET technology targeted at the 14nm technology node. It enables the circuit design exploration and benchmarking at the early technology development stage. Its application for transistor - SRAM cell design and co-optimisation is discussed.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Wang, Dr Xingsheng and Asenov, Professor Asen and Cheng, Dr Binjie |
Authors: | Cheng, B., Wang, X., Brown, A.R., Millar, C., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISBN: | 9780615717562 |
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