Statistical TCAD based PDK development for a FinFET technology at 14nm technology node

Cheng, B., Wang, X., Brown, A.R., Millar, C. and Asenov, A. (2012) Statistical TCAD based PDK development for a FinFET technology at 14nm technology node. In: SISPAD 2012, Denver, CO, USA, 5-7 Sep 2012, pp. 113-116. ISBN 9780615717562

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Publisher's URL: http://www.ece.umd.edu/sispad2012/

Abstract

A TCAD-based process design kit (PDK) development strategy is present for a generic SOI-based FinFET technology targeted at the 14nm technology node. It enables the circuit design exploration and benchmarking at the early technology development stage. Its application for transistor - SRAM cell design and co-optimisation is discussed.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wang, Dr Xingsheng and Asenov, Professor Asen and Cheng, Dr Binjie
Authors: Cheng, B., Wang, X., Brown, A.R., Millar, C., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9780615717562

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