Radu, A., Kirakosyan, A.A., Laroze, D. and Barseghyan, M.G. (2015) The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga0.7 Al0.3As quantum ring. Semiconductor Science and Technology, 30(4), 045006. (doi: 10.1088/0268-1242/30/4/045006)
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Abstract
The simultaneous influences of an intense laser field and static electric field on one-electron states and intraband optical absorption coefficient are investigated in two-dimensional GaAs/GaAl0.3 As quantum ring. An analytical expression of the effective confining potential in the presence of the external fields is obtained. The one-electron energy levels and wave functions are calculated using the effective mass approximation and an exact diagonalization technique. We show that changes in the incident light polarization lead to blue- or redshifts in the intraband optical absorption spectrum. Moreover, we found that blueshift and redshift are induced by the simultaneous influences of an intense laser and lateral electric fields. The obtained theoretical results indicate a novel opportunity to tune the performance of quantum rings and to control their specific properties by means of intense laser and homogeneous electric fields.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Laroze, Dr David |
| Authors: | Radu, A., Kirakosyan, A.A., Laroze, D., and Barseghyan, M.G. |
| College/School: | College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Semiconductor Science and Technology |
| Publisher: | IOP Publishing |
| ISSN: | 0268-1242 |
| ISSN (Online): | 1361-6641 |
| Copyright Holders: | Copyright © 2015 The Authors |
| First Published: | First published in Semiconductor Science and Technology 30(4):045006 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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