Advances in Single Mode and High Power AlGaInN Laser Diode Technology for Systems Applications

Najda, S. P. et al. (2015) Advances in Single Mode and High Power AlGaInN Laser Diode Technology for Systems Applications. In: Gallium Nitride Materials and Devices X, San Francisco, CA, USA, 07 Feb 2015, 93631A. (doi:10.1117/12.2076268)

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Abstract

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

Item Type:Conference Proceedings
Additional Information:Proceedings of SPIE Volume 9363
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kelly, Professor Anthony and Watson, Dr Scott
Authors: Najda, S. P., Perlin, P., Suski, T., Marona, L., Boćkowski, M., Leszczyński, M., Wisniewski, P., Czernecki, R., Kucharski, R., Targowski, G., Smalc-Koziorowska, J., Stanczyk, S., Watson, S., and Kelly, A. E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:0277-786X

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