Najda, S. P. et al. (2015) AlGaInN laser diode technology for free-space telecom applications. Free-Space Laser Communication and Atmospheric Propagation XXVII, San Francisco, CA, USA, 7 Feb 2015. 93540Q. (doi: 10.1117/12.2077459)
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Abstract
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. We consider the suitability of AlGaInN laser diode technology for free space laser communication, both airborne links and underwater telecom applications, mainly for defense and oil and gas industries. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
| Item Type: | Conference or Workshop Item |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watson, Dr Scott and Kelly, Professor Anthony |
| Authors: | Najda, S. P., Perlin, P., Suski, T., Marona, L., Boćkowski, M., Leszczyński, M., Wisniewski, P., Czernecki, R., Kucharski, R., Targowski, G., Watson, S., Kelly, A.E., Watson, M.A., Blanchard, P., and White, H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 0277-786X |
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