Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET

Valin, R., Martinez, A. and Barker, J.R. (2015) Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET. Journal of Applied Physics, 117(16), 164505. (doi: 10.1063/1.4919092)

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In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. This effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Barker, Professor John
Authors: Valin, R., Martinez, A., and Barker, J.R.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN (Online):0021-8979

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