Impact of self-heating on the statistical variability in bulk and SOI FinFETs

Wang, L., Brown, A. R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C. and Asenov, A. (2015) Impact of self-heating on the statistical variability in bulk and SOI FinFETs. IEEE Transactions on Electron Devices, 62(7), pp. 2106-2112. (doi: 10.1109/TED.2015.2436351)

Abstract

In this paper for the first time we study the impact of self-heating on the statistical variability of bulk and SOI FinFETs designed to meet the requirements of the 14/16nm technology node. The simulations are performed using the GSS ‘atomistic’ simulator GARAND using an enhanced electro-thermal model that takes into account the impact of the fin geometry on the thermal conductivity. In the simulations we have compared the statistical variability obtained from full-scale electro-thermal simulations with the variability at uniform room temperature and at the maximum or average temperatures obtained in the electro-thermal simulations. The combined effects of line edge roughness and metal gate granularity are taken into account. The distributions and the correlations between key figures of merit including the threshold voltage, on-current, subthreshold slope and leakage current are presented and analysed.

• Item Type: Articles
• Additional Information: (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Cheng, Dr Binjie and Wang, Dr Liping
• Authors: Wang, L., Brown, A. R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• ISSN (Online): 1557-9646
• Copyright Holders: Copyright © 2015 Institute of Electrical and Electronics Engineers
• First Published: First published in IEEE Transactions on Electron Devices 62(7):2106 - 2112
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.