A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

Cho, S.J., Roberts, J., Guiney, I., Li, X. , Ternent, G., Floros, K., Humphreys, C.J., Chalker, P. and Thayne, I.G. (2015) A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. Microelectronic Engineering, 147, pp. 277-280. (doi:10.1016/j.mee.2015.04.067)

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Abstract

The impact of subjecting a n-GaN surface to an in-situ argon plasma in an atomic layer deposition (ALD) tool immediately before deposition of an Al2O3 dielectric film is assessed by frequency dependent evaluation of Al2O3/GaN MOSCAPs. In comparison with a control with no pre-treatment, the use of a 50 W argon plasma for 5 min reduced hysteresis from 0.25 V to 0.07 V, frequency dispersion from 0.31 V to 0.03 V and minimum interface state density (Dit) as determined by the conductance method from 6.8 1012 cm2 eV1 to 5.05 1010 cm2 eV1 . 201

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sungjin and Thayne, Professor Iain and Ternent, Dr Gary
Authors: Cho, S.J., Roberts, J., Guiney, I., Li, X., Ternent, G., Floros, K., Humphreys, C.J., Chalker, P., and Thayne, I.G.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
Publisher:Elsevier
ISSN:0167-9317
ISSN (Online):1873-5568
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in Microelectronic Engineering 147:277-280
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
600761Silicon Compatible GaN Power ElectronicsIain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/K014471/1ENG - ENGINEERING ELECTRONICS & NANO ENG