Millar, R.W. , Gallacher, K. , Samarelli, A., Frigerio, J., Chrastina, D., Isella, G., Dieing, T. and Paul, D.J. (2015) Extending the emission wavelength of Ge nanopillars to 2.25 μm using silicon nitride stressors. Optics Express, 23(14), pp. 18193-18202. (doi: 10.1364/OE.23.018193) (PMID:26191877)
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Abstract
The room temperature photoluminescence from Ge nanopillars has been extended from 1.6 μm to above 2.25 μm wavelength through the application of tensile stress from silicon nitride stressors deposited by inductively-coupled-plasma plasma-enhanced chemical-vapour-deposition. Photoluminescence measurements demonstrate biaxial equivalent tensile strains of up to ~ 1.35% in square topped nanopillars with side lengths of 200 nm. Biaxial equivalent strains of 0.9% are observed in 300 nm square top pillars, confirmed by confocal Raman spectroscopy. Finite element modelling demonstrates that an all-around stressor layer is preferable to a top only stressor, as it increases the hydrostatic component of the strain, leading to an increased shift in the band-edge and improved uniformity over top-surface only stressors layers.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and Samarelli, Mr Antonio and Gallacher, Dr Kevin |
Authors: | Millar, R.W., Gallacher, K., Samarelli, A., Frigerio, J., Chrastina, D., Isella, G., Dieing, T., and Paul, D.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Optics Express |
Publisher: | Optical Society of America |
ISSN: | 1094-4087 |
ISSN (Online): | 1094-4087 |
Copyright Holders: | Copyright © 2015 Optical Society of America |
First Published: | First published in Optics Express 23(14):18193-18202 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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