Gerrer, L., Amoroso, S.M., Hussin, R. and Asenov, A. (2014) RTN distribution comparison for bulk, FDSOI and FinFETs devices. Microelectronics Reliability, 54(9-10), pp. 1749-1752. (doi: 10.1016/j.microrel.2014.07.013)
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Abstract
In this paper we investigate the sensitivity of RTN noise spectra to statistical variability alone and in combination with variability in the traps properties, such as trap level and trap activation energy. By means of 3D statistical simulation, we demonstrate the latter to be mostly responsible for noise density spectra dispersion, due to its large impact on the RTN characteristic time. As a result FinFETs devices are shown to be slightly more sensitive to RTN than FDSOI devices. In comparison bulk MOSFETs are strongly disadvantaged by the statistical variability associated with high channel doping.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Gerrer, Dr Louis and Amoroso, Dr Salvatore and Asenov, Professor Asen |
| Authors: | Gerrer, L., Amoroso, S.M., Hussin, R., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microelectronics Reliability |
| Publisher: | Elsevier Ltd. |
| ISSN: | 0026-2714 |
| ISSN (Online): | 1872-941X |
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