High-Speed GaN Micro-LED Arrays for Data Communications

Kelly, A.E. , McKendry, J.J.D., Zhang, S., Massoubre, D., Rae, B.R., Green, R.P., Henderson, R.K. and Dawson, M.D. (2012) High-Speed GaN Micro-LED Arrays for Data Communications. In: 14th International Conference on Transparent Optical Networks (ICTON), Coventry, UK, 2-5 Jul 2012, pp. 1-5. ISBN 978467322270 (doi:10.1109/ICTON.2012.6253883)

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Publisher's URL: http://www.nit.eu/icton-2012

Abstract

We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 um. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1 Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.

Item Type:Conference Proceedings
Keywords:micro-light-emitting diodes (micro-LEDs), complementary metal-oxide-semiconductor, high bandwidth, multi-channel
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kelly, Professor Anthony and Zhang, Dr Shuailong
Authors: Kelly, A.E., McKendry, J.J.D., Zhang, S., Massoubre, D., Rae, B.R., Green, R.P., Henderson, R.K., and Dawson, M.D.
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Biomedical Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:2161-2056
ISBN:978467322270

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