Characteristics and Applications of InGaN Micro-Light Emitting Diodes on Si Substrates

Tian, P. et al. (2013) Characteristics and Applications of InGaN Micro-Light Emitting Diodes on Si Substrates. In: 2013 IEEE Photonics Conference (IPC), Bellevue, WA, USA, 8-12 Sep 2013, pp. 97-98. ISBN 9781457715068 (doi:10.1109/IPCon.2013.6656387)

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Abstract

InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

Item Type:Conference Proceedings
Keywords:GaN, micro-LEDs, Si, bandwidth
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kelly, Professor Anthony and Watson, Dr Scott and Zhang, Dr Shuailong
Authors: Tian, P., McKendry, J., Gong, Z., Zhang, S., Watson, S., Zhu, D., Watson, I., Gu, E., Kelly, A. E., Humphreys, C., and Dawson, M.
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Biomedical Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781457715068
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