Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Herrnsdorf, J. et al. (2015) Active-matrix GaN micro light-emitting diode display with unprecedented brightness. IEEE Transactions on Electron Devices, 62(6), pp. 1918-1925. (doi: 10.1109/TED.2015.2416915)

Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Watson, Dr Scott and Mckendry, Dr Jonathan and Kelly, Professor Anthony and Zhang, Dr Shuailong
• Authors: Herrnsdorf, J., Mckendry, J. J.D., Zhang, S., Xie, E., Ferreira, R., Massoubre, D., Zuhdi, A. M., Henderson, R. K., Underwood, I., Watson, S., Kelly, A. E., Gu, E., and Dawson, M. D.
• College/School: College of Science and Engineering > School of Engineering > Biomedical Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: IEEE
• ISSN: 0018-9383
• ISSN (Online): 1557-9646
• Copyright Holders: Copyright © 2015 The Authors
• First Published: First published in IEEE Transactions on Electron Devices 62(6):1918-1925
• Publisher Policy: Reproduced under a Creative Commons License