Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Herrnsdorf, J. et al. (2015) Active-matrix GaN micro light-emitting diode display with unprecedented brightness. IEEE Transactions on Electron Devices, 62(6), pp. 1918-1925. (doi:10.1109/TED.2015.2416915)

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Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kelly, Professor Anthony and Watson, Dr Scott and Zhang, Dr Shuailong and Mckendry, Dr Jonathan
Authors: Herrnsdorf, J., Mckendry, J. J.D., Zhang, S., Xie, E., Ferreira, R., Massoubre, D., Zuhdi, A. M., Henderson, R. K., Underwood, I., Watson, S., Kelly, A. E., Gu, E., and Dawson, M. D.
College/School:College of Science and Engineering > School of Engineering > Biomedical Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:IEEE
ISSN:0018-9383
ISSN (Online):1557-9646
Copyright Holders:Copyright © 2015 The Authors
First Published:First published in IEEE Transactions on Electron Devices 62(6):1918-1925
Publisher Policy:Reproduced under a Creative Commons License

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