Interplay between statistical variability and reliability in contemporary pmosfets: measurements versus simulations

Hussin, R., Amoroso, S. M., Gerrer, L., Kaczer, B., Weckx, P., Franco, J., Vanderheyden, A., Vanhaeren, D., Horiguchi, N. and Asenov, A. (2014) Interplay between statistical variability and reliability in contemporary pmosfets: measurements versus simulations. IEEE Transactions on Electron Devices, 61(9), pp. 3265-3273. (doi: 10.1109/TED.2014.2336698)

Abstract

This paper presents an extensive study of the interplay between as-fabricated (time-zero) variability and gate oxide reliability (time-dependent variability) in contemporary pMOSFETs. We compare physical simulation results using the atomistic simulator GARAND with experimental measurements. The TCAD simulations are accurately calibrated to reproduce the average transistor behavior. When random discrete dopants, line edge roughness, and gate polysilicon granularity are considered, the simulations accurately reproduce time-zero (as-fabricated) statistical variability, as well as time-dependent variability data, represented by threshold voltage shift distributions. The calibrated simulations are then used to predict the reliability behavior at different bias conditions and for different device dimensions.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Gerrer, Dr Louis and Amoroso, Dr Salvatore and Asenov, Professor Asen
• Authors: Hussin, R., Amoroso, S. M., Gerrer, L., Kaczer, B., Weckx, P., Franco, J., Vanderheyden, A., Vanhaeren, D., Horiguchi, N., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• ISSN (Online): 1557-9646