Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

Biagioni, P., Sakat, E., Baldassarre, L., Calandrini, E., Samarelli, A., Gallacher, K., Frigerio, J., Isella, G., Paul, D. and Ortolani, M. (2015) Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si. Proceedings of the SPIE: The International Society for Optical Engineering, 9357, p. 93570. 93570. (doi:10.1117/12.2084500)

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Abstract

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

Item Type:Articles (Letter)
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Samarelli, Mr Antonio and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Biagioni, P., Sakat, E., Baldassarre, L., Calandrini, E., Samarelli, A., Gallacher, K., Frigerio, J., Isella, G., Paul, D., and Ortolani, M.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Proceedings of the SPIE: The International Society for Optical Engineering
Publisher:Society of Photo-optical Instrumentation Engineers
ISSN:0277-786X

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG