Moran, D. A. J. , Russell, S. A. O., Sharabi, S. and Tallaire, A. (2012) High frequency hydrogen-terminated diamond field effect transistor technology. In: 12th IEEE International Conference on Nanotechnology (IEEE-NANO), Birmingham UK, 20-23 Aug 2012, pp. 1-5. ISBN 9781467321983 (doi: 10.1109/NANO.2012.6321925)
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Abstract
We report on the fabrication and characterization of 120 nm and 50nm gate length hydrogen-terminated diamond field effect transistors. DC operation and performance Reduction of gate length from 120 nm to 50 nm is found to increase the extrinsic cut-off frequency (fT) from 43 GHz to 53 GHz. We believe this to be the highest cut-off frequency yet reported for a diamond based transistor.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sharabi, Mr Salah and Russell, Dr Stephen and Moran, Professor David |
| Authors: | Moran, D. A. J., Russell, S. A. O., Sharabi, S., and Tallaire, A. |
| College/School: | College of Science and Engineering > School of Chemistry College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 1944-9399 |
| ISBN: | 9781467321983 |
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